PART |
Description |
Maker |
2SD1857A 2SD1918 2SD2211 |
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) Power Transistor (160V 1.5A) Power Transistor (160V , 1.5A)
|
ROHM[Rohm]
|
2SA1770 2SC4614 2SA1770S 2SC4614S 2SC4614R |
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SPAK SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.5A I(C) | SIP High-Voltage Switching Applications
|
SANYO[Sanyo Semicon Device]
|
2SC3117 2SA1249 2SC3117T 2SC3117S |
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管|晶体管|叩| 160V五(巴西)总裁| 1.5AI(丙)|26 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | TO-126 160V/1.5A Switching Applications
|
Sanyo Semicon Device
|
ZXTN5551Z ZXTN5551ZTA |
160V, SOT89, NPN high voltage transistor
|
Diodes Incorporated Zetex Semiconductors
|
ZXTN5551FLTA ZXTN5551FL |
160V, SOT23, NPN High voltage transistor
|
Diodes Incorporated Zetex Semiconductors
|
M391T2953BG0-CD5/CC M378T2953BG0-CD5/CC M378T3354B |
TVS UNIDIRECT 1500W 16V SMC 无缓冲DDR2的内存模 TVS UNIDIRECT 1500W 160V SMC TVS UNI-DIR 160V 1500W SMC TVS BIDIRECT 1500W 160V SMC DDR2 Unbuffered SDRAM MODULE
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
2SA1768 2SC4612 2SC4612R 2SC4612T |
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 1.5A I(C) | SPAK High-Voltage Switching Applications
|
SANYO[Sanyo Semicon Device]
|
2SD1868B 2SD1869 |
Silicon NPN Transistor TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 100MA I(C) | TO-226VAR 晶体管|晶体管|叩| 160V五(巴西)总裁| 100mA的一(c)|26VAR
|
Hitachi Semiconductor TE Connectivity, Ltd.
|
CT90AM-18 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V INSULATED GATE BIPOLAR TRANSISTOR
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
CSA1220AO CSA1220AY CSA1220AR |
TRANSISTOR | BJT | PNP | 160V V(BR)CEO | 1.2A I(C) | TO-126 晶体管|晶体管|进步党| 160V五(巴西)总裁| 1.2AI(丙)|26
|
Electronic Theatre Controls, Inc.
|